Semiconductors, Electronic

Electron band bending of polar, semipolar and non-polar GaN surfaces

I. Bartoš, O. Romanyuk, J. Houdkova, P. P. Paskov, T. Paskova, and P. Jiříček

Journal of Applied Physics Vol. 119 (2016) : 105303

Hybrid Sensor Based on AlGaN/GaN Molecular Controlled Device

Meital Eckshtain-Levi, Eyal Capua, Yossi Paltiel, and Ron Naaman

ACS Sensors Vol. 1 (2016) : 185-189

Cell-Capture and Release Platform Based on Peptide-Aptamer-Modified Nanowires

Jingying Li, Cui Qi, Zheng Lian, Qiusen Han, Xinhuan Wang, Shuangfei Cai, Rong Yang, and Chen Wang

ACS Applied Materials & Interfaces Vol. 8 (2016) : 2511-2516

Long-term stability assessment of AlGaN/GaN field effect transistors modified with peptides: Device characteristics vs. surface properties

Nathaniel Rohrbaugh, Isaac Bryan, Zachary Bryan, Ramon Collazo, and Albena Ivanisevic

AIP Advances Vol. 5 (2015) : 097102

An AuNPs-functionalized AlGaN/GaN high electron mobility transistor sensor for ultrasensitive detection of TNT

Yahui Guo, Xiongtao Wang, Bin Miao, Ying Li, Weirong Yao, Yunfei Xie, Jiadong Li, Dongmin Wu, and Renjun Pei

RSC Adv. Vol. 5 (2015) : 9