T his eagerly–anticipated revision offers more than 50% new or revised material that reflects the multitude of important recent discoveries and advances in device physics and integrated circuit processing. The book offers a thorough introduction to physical principles of modern semiconductor devices and their fabrication technology. Readers are presented with theoretical and practical aspects of every step in device characterizations and fabrication, with an emphasis on integrated circuits. The material is divided into three parts: the basic properties of semiconductor materials, emphasizing silicon and gallium arsenide the physics and characteristics of semiconductor device bipolar, unipolar special microwave and photonic devices the latest processing technologies, from crystal growth to lithographic pattern transfer Each chapter is presented in a logical manner enabling readers to learn all important devices from a single source. Plus, the book covers historical developments of devices and technology in the last 100 years. Readers gain a sound perspective on the past and a foundation for projecting future trends. -This text refers to an out of print or unavailable edition of this title.
About the Author
S. M. Sze is UMC Chair Professor of the National Chiao Tung University and President of the National Nano Device Laboratories, Taiwan, R.O.C. For many years he was a member of the technical staff at Bell Laboratories. Professor Sze is the co–inventor of the nonvolatile semiconductor memory. He has written numerous texts on device physics, including PHYSICS OF SEMICONDUCTOR DE VICES, considered a reference classic. In 1991, he received the IEEE J. J. Ebers award for his "fundamental and pioneering contributions..." He received his PhD in solid–state electronic from Stanford University in 1963. -This text refers to an out of print or unavailable edition of this title.