STR provides specialized software and consulting services for modeling of crystal growth, epitaxial process, and operation of semiconductor devices. A comprehensive research stays behind every consulting activity and software product which enables careful validation of physical models and approaches applied. STR’s expertise in the crystal growth science and device engineering is presented in variety of publications in the peer-reviewed journals.
Four product lines are being developed and promoted by STR:
- Crystal growth from the melt and solution;
- Bulk crystal growth from the gas phase;
- Deposition and epitaxy;
- Optoelectronic devices.
CGSim - Cz, DSS, Kyropoulos, Bridgman crystal growth from the melt (Si, m-Si, UMG-Si, GaAs, InP, SiGe, Ge, Sapphire, YAG, and more)
PolySim - polysilicon deposition by Siemens process
CVDSim - epitaxy of compound semiconductors (Si, SiC, III-V, III-Nitride)
Virtual Reactor - bulk crystal growth of SiC, AlN, GaN by PVT and HVPE
SimuLED - optoelectronic and electronic devices (LEDs/LDs, FETs, Schottky diodes)
Over 170 industrial companies and academic institutions worldwide are the end-users of STR software. The customer base includes top material and equipment manufacturers.
More than 40 scientists and software engineers in Russia, USA, and Germany. Local representatives in China, Korea, Taiwan, and Japan.
CGSim (melt), PolySim (Siemens), CVDSim (epi), Virtual Reactor (PVT/HVPE/CVD), SimuLED (LED/LD), SimuLAMP (LED lamps/arrays), SiLENSe (LED/LD), SpeCLED (LED), RATRO (LED), BESST (III-N SLs), FETIS (HEMTs), SELES (LED)