Semiconductor Hall effect

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Noncontact semiconductor wafer characterization with the terahertz Hall effect

Abstract

We demonstrate noncontact measurements of the Hall mobility of dopedsemiconductor wafers with roughly 250 μm spatial resolution, using polarization rotation of focused beams of terahertz (THz) radiation in the presence of a static magnetic field. Quantitative and independent images of both carrier density and mobility of a dopedsemiconductor wafer have been obtained.

© 1997 American Institute of Physics

Received Thu Dec 19 00:00:00 UTC 1996 Accepted Mon May 26 00:00:00 UTC 1997

/content/aip/journal/apl/71/1/10.1063/1.119456

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