Materials Science in Semiconductor Processing

provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.

Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.

Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.

Audience

For materials scientists, applied solid state physicists, surface scientists, electrochemists, electronic engineers.

Editor-in-Chief A.F. Hepp NASA Glenn Research Center, Cleveland, OH, USA, Deputy Editor K.K. Banger University of Cambridge, Cambridge, UK, Editorial Advisory Board M. Eizenberg Technion - Israel Institute of Technology, Haifa, Israel, D.A. Amos University of Louisville, Louisville, KY, USA, A. Anctil Brookhaven National Laboratory, Upton, NY, USA, A.R. Barron Rice University, Houston, TX, USA, H. Bracht Westfälische Wilhelms-Universität Münster, Münster, Germany, L.-C. Chen National Taipei University of Technology, Taipei, Taiwan, ROC, K.Y. Cheong Universiti Sains Malaysia, Penang, Malaysia, R.R. Chianelli University of Texas at El Paso, El Paso, TX, USA, A. Cros Stötter Universitat de València, Paterna, Valencia, Spain, D.J. Flood Natcore Technology, Inc., Oberlin, OH, USA, M.A. Fraga Inst. Tecnologico de Aeronaut, Sao José dos Campos-SP, Brazil, G. Impellizzeri IMM-CNR and University of Catania, Italy, M.H.-C Jin University of Texas at Arlington, Arlington, TX, USA, R.P.O. Jones University of York, York, UK, S. Kaneco Mie University, Mie, Japan, Z.H. Kang Soochow University, Suzhou, China, C.P. Kubiak University of California at San Diego (UCSD), La Jolla, CA, USA, P.N. Kumta University of Pittsburgh, Pittsburgh, PA, USA, X. Li University of Illinois at Urbana-Champaign, Urbana, IL, USA, J. Maranchi Johns Hopkins University, Applied Physics Lab, Laurel, MD, USA, M.A. Meléndez-Lira Centro de Investigación y de Estudios Avanzados del IPN (CINVESTAV-IPN), San Pedro Zacatenco, Mexico, M.C. Natan Cabot Corporation, Mountain View, CA, USA, A. Paskaleva Bulgarian Academy of Sciences, Sofia, Bulgaria, R.P. Raffaelle Rochester Institute of Technology, Rochester, NY, USA, D. Schiraldi Case Western Reserve University, Cleveland, OH, USA, A. Türüt Atatürk University, Erzurum, Turkey, T.A. Vanderah National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA, J. Williams Australian National University (ANU), Canberra, ACT, Australia